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MMBT2907A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MMBT2907A
Description  isc Silicon PNP Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MMBT2907A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon PNP Transistor
MMBT2907A
DESCRIPTION
·
Low Voltage Use
·
Ultra Super Mini Mold Package
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in low noise and small signal amplifiers
from VHF band to UHF band
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.6
A
PC
Collector Power Dissipation
@TC=25℃
0.3
W
TJ
Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA ; IB= 0
-60
V
ICBO
Collector Cutoff Current
VCE= -50V; IE= 0
-0.1
μ
A
ICEX
Collector Cutoff Current
VCE= -30V; VBE=-0.5V
-0.05
μ
A
hFE
DC Current Gain
IC=-0.1mA ; VCE= -10V
75
IC=1mA ; VCE= -10V
100
IC=-10mA ; VCE= -10V
100
IC=-150mA ; VCE= -10V
100
300
IC=-500mA ; VCE= -10V
50
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -150mA ,IB= -15mA
-0.4
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -500mA ,IB= -50mA
-1.6
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= -150mA ,IB= -15mA
-1.3
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= -500mA ,IB= -50mA
-2.6
V


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