STTH20002TV1 datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STTH20002TV

3/5

Fig. 1: Peak current versus duty cycle (per diode).

Fig. 2-1: Forward voltage drop versus forward

current (typical values, per diode).

Fig. 2-2: Forward voltage drop versus forward

current (maximum values, per diode).

Fig. 3: Relative variation of thermal impedance

junction to case versus pulse duration.

Fig. 4: Junction capacitance versus reverse

voltage applied (typical values, per diode).

Fig. 5: Reverse recovery charges versus dIF/dt

(typical values, per diode).

100

200

300

400

500

600

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

δ=tp/T

P = 160W

P = 120W

P = 80W

I (A)

100

120

140

160

180

200

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

(A)

T =150°C

T =25°C

(V)

100

120

140

160

180

200

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

(A)

T =150°C

T =25°C

(V)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

t (s)

Single pulse

100

1000

10000

100

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

100

200

300

400

500

600

700

800

900

1000

100

1000

Q (nC)

I =100A

V =160V

dI /dt(A/µs)

T =25°C

T =125°C

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