IXTP110N055P datasheet(1/5 Pages) IXYS

Part #	IXTP110N055P

Description	PolarHT Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C55

V

DGR

T

J

= 25

°C to 175°C; R

GS = 1 MΩ

55

V

GS

Continuous

±20

V

GSM

Tranisent

±30

V

I

D25

T

C

= 25

°C

110

A

I

DRMS

External lead current limit

75

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

250

A

I

AR

T

C

= 25

°C

110

A

E

AR

T

C

= 25

°C30

mJ

E

AS

T

C

= 25

°C

1.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 10 Ω

P

D

T

C

= 25

°C

330

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Maximum tab temperature for soldering

260

°C

TO-263 package for 10s

M

d

Mounting torque

(TO-3P / TO-220)

1.13/10 Nm/lb.in.

Weight

TO-3P

5.5

g

TO-220

4

g

TO-263

3

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99182A(05/05)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

V

DSS

V

GS

= 0 V, I

D = 250 μA55

V

GS(th)

V

DS

= V

GS, ID = 250μA

2.5

5.0

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C

250

μA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ID25

11

13.5

m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

PolarHTTM

Power MOSFET

N-Channel Enhancement Mode

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

TO-3P (IXTQ)

TO-263 (IXTA)

TO-220 (IXTP)

G

D

S

(TAB)

D

(TAB)

G

S

G

S

(TAB)

IXTQ 110N055P

IXTA 110N055P

IXTP 110N055P

V

DSS

=

55

V

I

D25

= 110

A

R

DS(on) =

13.5 m

Ω

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