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74LVC1G34 Datasheet(PDF) 1 Page - Silicon Supplies

Part # 74LVC1G34
Description  Single Buffer Gate in bare die form
PDF  6 Pages
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Manufacturer  SS [Silicon Supplies]
Direct Link  https://siliconsupplies.com/
Logo SS - Silicon Supplies

74LVC1G34 Datasheet(HTML) 1 Page - Silicon Supplies

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Low Voltage CMOS Logic – 74LVC1G34
Single Buffer Gate in bare die form
Rev 1.0
29/06/19
Features:
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Die Size (Unsawn)
420 x 380
17 x 15
µm
mils
Minimum Bond Pad Size
76 x 76
2.99 x 2.99
µm
mils
Die Thickness
280 (±20)
11.02 (±0.79)
µm
mils
Top Metal Composition
Al-Si-Cu 3 µm
Back Metal Composition
N/A – Bare Si
Inputs directly interface TTL
The 74LVC1G34 single buffer gate performs the
Boolean function Y = A. The inverter can be driven by
either 3.3V or 5V inputs enabling use of this device in a
mixed 3.3V and 5V environment. The 74LVC1G34
operates over a 1.65V to 5.5V supply range with low
power consumption and is fully specified for partial
power-down applications using IOFF. The IOFF circuitry
disables the output, preventing damaging backflow
current through the device when it is powered down.
The device suits level translation and interfacing TTL to
CMOS logic applications at low power.
Inputs accept up to 5.5V enabling level translation
down to VCC
Wide Supply Voltage: VCC 1.65V - 5.5V
Output Drive capability: ±24mA, VCC = 3.3V
Low Quiescent Current: 4µA max
High speed: tpd 4.1ns max, VCC = 3.3V
Tiny die size.
Ordering Information
Description
Die Dimensions in µm (mils)
420 (17)
The following part suffixes apply:
No suffix - MIL-STD-883 /2010B Visual Inspection
For High Reliability versions of this product please see
54LVC1G34
Supply Formats:
Mechanical Specification
Default – Die in Waffle Pack (400 per tray capacity)
Sawn Wafer on Tape – On request
Unsawn Wafer – On request
Die Thickness <> 280µm(11 Mils) – On request
Assembled into Ceramic Package – On request
Page 1 of 6 
www.siliconsupplies.com


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