PMCM650VNE datasheet(4/15 Pages) NEXPERIA

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Nexperia

PMCM650VNE

12 V, N-channel Trench MOSFET

PMCM650VNE

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Product data sheet

7 April 2015

4 / 15

Tj (°C)

- 75

175

125

- 25

017aaa123

120

Pder

(%)

Fig. 2. Normalized total power dissipation as a

function of junction temperature

Tj (°C)

- 75

175

125

- 25

017aaa124

120

Ider

(%)

Fig. 3. Normalized continuous drain current as a

function of junction temperature

aaa-013878

10-1

102

(A)

10-2

VDS (V)

10-1

102

Limit RDSon = VDS/ID

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

tp = 10 µs

tp = 100 µs

tp = 1 ms

tp = 10 ms

tp = 100 ms

IDM = single pulse

Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

180

225

K/W

[2]

K/W

in free air

[3]

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

in free air; t ≤ 5 s

[3]

K/W

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