BC52PAS datasheet(8/15 Pages) NEXPERIA

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BC51_52_53PAS_SER

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Product data sheet

Rev. 1 — 19 June 2015

8 of 15

Nexperia

BC51PAS; BC52PAS; BC53PAS

45 V/60 V/80 V, 1 A PNP medium power transistors

Characteristics

[1]

Pulse test: tp  300 ms;  0.02.

Table 8.

Characteristics

Tamb = 25 C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current

VCB = 30 V; IE =0A

100 nA

VCB = 30 V; IE =0A; Tj = 150 C-

10

A

IEBO

emitter-base cut-off current

VEB = 5V;IC =0A

100 nA

hFE

DC current gain

VCE = 2V; IC = 5mA

VCE = 2V; IC = 150 mA

[1] 63

250

VCE = 2V; IC = 500 mA

[1] 40

hFE selection -10

VCE = 2V; IC = 150 mA

[1] 63

160

hFE selection -16

VCE = 2V; IC = 150 mA

[1] 100

250

VCEsat

collector-emitter saturation

voltage

IC = 500 mA; IB = 50 mA

[1] --

500 mV

VBE

base-emitter voltage

VCE = 2V; IC = 500 mA

[1] --

1V

collector capacitance

VCB = 10 V; IE = ie =0A; f=1MHz

transition frequency

VCE = 5V; IC = 50 mA; f = 100 MHz

145

MHz

VCE = 2V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Tamb =25 C

Fig 7.

DC current gain as a function of collector

current; typical values

Fig 8.

Collector current as a function of

collector-emitter voltage; typical values

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