74AXP1G10 datasheet(1/16 Pages) NEXPERIA

Part #	74AXP1G10

Description	Low-power 3-input NAND gate

PDF	16 Pages

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Manufacturer	NEXPERIA [Nexperia B.V. All rights reserved]

Direct Link	https://www.nexperia.com/

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1 / 16 page

1.

General description

The 74AXP1G10 is a single 3-input NAND gate.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall

times.

This device ensures very low static and dynamic power consumption across the entire

VCC range from 0.7 V to 2.75 V. It is fully specified for partial power down applications

using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging

backflow current through the device when it is powered down.

2.

Features and benefits

 Wide supply voltage range from 0.7 V to 2.75 V

 Low input capacitance; CI = 0.5 pF (typical)

 Low output capacitance; CO = 1.0 pF (typical)

 Low dynamic power consumption; CPD = 2.5 pF at VCC = 1.2 V (typical)

 Low static power consumption; ICC = 0.6 A (85 C maximum)

 High noise immunity

 Complies with JEDEC standard:

 JESD8-12A.01 (1.1 V to 1.3 V)

 JESD8-11A.01 (1.4 V to 1.6 V)

 JESD8-7A (1.65 V to 1.95 V)

 JESD8-5A.01 (2.3 V to 2.7 V)

 ESD protection:

 HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV

 CDM JESD22-C101E exceeds 1000 V

 Latch-up performance exceeds 100 mA per JESD 78 Class II

 Inputs accept voltages up to 2.75 V

 Low noise overshoot and undershoot < 10 % of VCC

 IOFF circuitry provides partial Power-down mode operation

 Multiple package options

 Specified from

40 Cto+85 C

74AXP1G10

Low-power 3-input NAND gate

Rev. 1 — 20 October 2015

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74AXP1G10 Datasheet(PDF) 1 Page - Nexperia B.V. All rights reserved

74AXP1G10 Datasheet(HTML) 1 Page - Nexperia B.V. All rights reserved

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