BAS116L datasheet(1/12 Pages) NEXPERIA

Part #	BAS116L

Description	Low-leakage diode

PDF	12 Pages

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Manufacturer	NEXPERIA [Nexperia B.V. All rights reserved]

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BAS116L

Low-leakage diode

4 May 2016

Product data sheet

1. General description

Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2

(SOD882) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

• Switching time typical: trr = 0.8 µs

• Low leakage current typical: IR = 3 pA

• Repetitive peak reverse voltage: VRRM ≤ 85 V

• Low capacitance typical: Cd = 2 pF

• Leadless ultra small SMD plastic package

• Low package height of 0.48 mm

• AEC-Q101 qualified

3. Applications

• Low-leakage current applications

• General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRRM

repetitive peak reverse

voltage

Tj = 25 °C

-

85

V

IF

forward current

Tamb = 25 °C

[1]

-

325

mA

VR

reverse voltage

Tj = 25 °C

-

75

V

VF

forward voltage

IF = 150 mA; Tj = 25 °C

-

1.25

V

IR

reverse current

VR = 75 V; Tj = 25 °C

-

0.003 5

nA

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;

RL = 100 Ω; Tamb = 25 °C

-

0.8

3

µs

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

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