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MMBT8550 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # MMBT8550
Description  NPN Transistor
PDF  3 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

MMBT8550 Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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MMBT8050
NPN Transistor
1 / 3
www.pingjingsemi.com
Revision：1.1 Jan-2019
Features
For Switching and Amplifier Applications.
As Complementary Type of the PNP Transistor
MMBT8550 is Recommended.
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCEO
25
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55 to 150
℃
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA Current Gain Group
C
D
at VCE = 1 V, IC = 500 mA
HFE
100
160
40
-
-
250
400
-
Collector Base Cutoff Current
at VCB = 35 V
ICBO
-
-
100
nA
Collector Base Breakdown Voltage
at IC = 10 μA
V(BR)CBO
40
-
-
V
Collector Emitter Breakdown Voltage
at IC = 2 mA
V(BR)CEO
25
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 μA
V(BR)EBO
6
-
-
V
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCE(sat)
-
-
0.5
V
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VBE(sat)
-
-
1.2
V
Transition Frequency
at VCE = 5 V, IC = 10 mA
FT
-
100
-
MHz
SOT-23
(TO-236)
1.Base 2.Emitter 3.Collector
Marking：D9D


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