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MMBTSC3875 Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # MMBTSC3875
Description  NPN Transistor
PDF  4 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

MMBTSC3875 Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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MMBTSC3875
NPN Transistor
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Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 6 V, IC = 2 mA
Current Gain Group
O
Y
G
L
HFE
70
120
200
350
-
-
-
-
140
240
400
700
Collector Base Cutoff Current
at VCB = 60 V
ICBO
-
-
100
nA
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
-
-
100
nA
Emitter Base Breakdown Voltage
at IE = 100 μA
V(BR)EBO
5
-
-
V
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
VCE(sat)
-
0.1
0.25
V
Base Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
VBE(sat)
-
-
1
V
Transition Frequency
at VCE = 10 V, IC = 1 mA
fT
80
-
-
MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
Cob
-
-
3.5
pF
Collector Base Breakdown Voltage
at IC = 100 μA
V(BR)CBO
60
-
-
V
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
50
-
-
V
www.pingjingsemi.com
Revision：1.0 Mar-2019



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