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PJM2300NSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM2300NSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 6 page  PJM2300NSA N-Channel MOSFET 1 / 6 ⚫ TrenchFET Power MOSFET ⚫ Excellent RDS(on) and Low Gate Charge ⚫ Load Switch for Portable Devices ⚫ DC/DC Converter Absolute Maximum Ratings Ratings at TA =25 ℃ unless otherwise specified. Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 4.5 A Pulsed Drain Current Note1 IDM 18 Power Dissipation PD 0.35 W Junction and Storage Temperature Range TJ, TSTG 150, -55 to 150 °C Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note2 RθJA 357 °C/W Applications Feature SOT-23 Schematic diagram 1 2 Gate Source 3Drain 1. Gate 2.Source 3.Drain Marking: M02 www.pingjingsemi.com Revision：1.0 J an-2019 |
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