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PJM3018NSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # PJM3018NSA
Description  N- Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3018NSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM3018NSA
N- Enhancement Mode Field Effect Transistor
www.pingjingsemi.com
Revision：1.0 Nov-2018
1 /
6
Features
◆
Surface Mount Package
◆
Low RDS(ON)
◆
ESD protected(HBM) up to 2KV
Applications
◆
Switching Application
Absolute Maximum Ratings
(TC=25
℃, unless otherwise noted)
SOT-23
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current Note1
ID
0.1
A
Power Dissipation
PD
0.35
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ.
Units
Maximum Junction-to-Ambient Note1
RθJA
357
°C/W
1.Gate 2.Source 3.Drain
Marking: 3018K
D
S
G


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