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PJM3420NSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # PJM3420NSA
Description  N- Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3420NSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM3420NSA
N- Enhancement Mode Field Effect Transistor
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www.pingjingsemi.com
Revision：1.0 Sep-2018
⚫
Load Switch for Portable Devices
Absolute Maximum Ratings
Ratings at TA=25℃ unless otherwise specified.
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
6
A
Pulsed Drain Current
IDM
25
Power Dissipation
PD
0.9
W
Junction and Storage Temperature Range
TJ, TSTG
150, -55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ.
Units
Maximum Junction-to-Ambient
RθJA
139
°C/W
Applications
SOT-23
1.Gate 2.Source 3.Drain
Marking：R20
Schematic diagram
3
1
2
Gate
Source
Drain
⚫
TrenchFET Power MOSFET
⚫
Excellent RDS(on) and Low Gate Charge
Feature


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