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TIP36AB Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # TIP36AB
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TIP36AB Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
TIP36AB
DESCRIPTION
·
DC Current Gain-
: hFE= 25(Min)@IC = -1.5A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-peak
-40
A
IB
Base Current
-5
A
PC
Collector Power Dissipation@TC=25℃
100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.25
℃
/W


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