STS1C1S250 datasheet(1/10 Pages) STMICROELECTRONICS

Part #	STS1C1S250

Description	N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET

PDF	10 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 10 page

N-CHANNEL 250V - 0.9

Ω -0.75A SO-8

P-CHANNEL 250V - 2.1

Ω -0.6A SO-8

MESH OVERLAY POWER MOSFET

1/10

October 2003

STS1C1S250

s

TYPICAL RDS(on) (N-Channel) = 0.9 Ω

s

TYPICAL RDS(on) (P-Channel) = 2.1 Ω

s

GATE-SOURCE ZENER DIODE

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This complementary pair uses the Company's pro-

prietary high voltage MESH OVERLAY™ process

based on advanced strip layout and efficient edge

termination. Designed for high volume manufactur-

ing capability, it is ideal in lighting converters such as

CFL supplied from 120V mains.

APPLICATIONS

s

LIGHTING

ABSOLUTE MAXIMUM RATINGS

(1)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STS1C1S250(N-Channel)

STS1C1S250(P-Channel)

250 V

<1.4

Ω

<2.8

Ω

0.80 A

0.60 A

Symbol

Parameter

Value

Unit

N-CHANNEL

P-CHANNEL

VDS

Drain-source Voltage (VGS =0)

250

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

250

V

VGS

Gate- source Voltage

±25

V

ID

Drain Current (continuous) at TC = 25°C

0.75

0.60

A

ID

Drain Current (continuous) at TC = 100°C

0.47

0.38

A

IDM (1)

Drain Current (pulsed)

3

2.4

A

PTOT

Total Dissipation at TC = 25°C Single Operation

Total Dissipation at TC = 25°C Dual Operation

1.6

2

W

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

SO-8

INTERNAL SCHEMATIC DIAGRAM

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