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FTB1366F Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTB1366F Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page  2012. 02. 27 1/2 SEMICONDUCTOR TECHNICAL DATA FTB1366F Revision No : 0 FTB1366F TRANSISTOR (PNP) FEATURES Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Complementary to FTD2058F MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -3 A PC Collector power dissipation TJ Junction temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-50mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -7 V Collector cut-off current ICBO VCB=-60V, IE=0 -100 µA Emitter cut-off current IEBO VEB=-7V, IC=0 -100 µA hFE(1) VCE=-5V, IC=-0.5A 60 200 DC current gain hFE(2) VCE=-5V, IC=-3A 20 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-0.2A -1 V Base-emitter voltage VBE VCE=-5V, IC=-0.5A -1 V Transition frequency fT VCE=-5V, IC=-0.5A 9 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 150 pF Fall time tf 4 . 0 µs Storage time ts IC=-2A, IB1=-IB2=-0.2A VCC=-30V 1.7 µs CLASSIFICATION OF hFE(1) Y O k n a R Range 0 0 2 - 0 0 1 0 2 1 - 0 6 TO-220F A A B C C D D E E F G H H 1 52 MAX 1 52 MAX J K L M L N N N O Q R R 1 2 3 M DIM MILLIMETERS 10 16 0 20 + _ 15 00 0 20 + _ 3 00 0 20 + _ 0 625±0 125 3 50 typ 0 45 0 1 + _ 3 80 0 2 + _ 13 20 0 20 + _ 2 54 0 2 + _ 4 50 0 2 + _ 6 36 0 3 + _ 2 70 0 20 + _ 2 7 typ 16 80 0 4 + _ 1. Base 2. Collector 3. Emitter Ta=25℃ Tc=25℃ 2 25 W |
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