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ISCNL180D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISCNL180D
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNL180D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCNL180D
·
FEATURES
·
Static drain-source on-resistance:
RDS(on)≤32mΩ
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Power switching application
·
Hard switched and high frequency circuits
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
30
A
IDM
Drain Current-Single Pulsed
70
A
PD
Total Dissipation @TC=25℃
85
W
Tj
Tstg
Operating Junction And Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
1.8
℃
/W
·
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID= 250µA
100
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= 250µA
1.3
2.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 10A
32
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V
±100
nA
IDSS
Drain-Source Leakage Current
VDS= 100V; VGS= 0V
1
µA
VSD
Diode forward voltage
IS= 10A, VGS = 0V
1.2
V
1
3
2


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