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S2818A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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S2818A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor S2818A DESCRIPTION · High Voltage-VCBO= 1500V(Min.) · Collector Current- IC = 7.5A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Color TV Horizontal output appl ications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current 5 A ICM Collector Current-Peak 7.5 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
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