Transistors

Publication date : December 2004

SJC00324AED

1

2SC6036

Silicon NPN epitaxial planar type

For general amplification

Complementary to 2SA2162



Features





SSS-Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing



Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

15

V

Collector-emitter voltage (Base open)

12

V

Emitter-base voltage (Collector open)

5

V

Collector current

500

mA

Peak collector current

1

A

Collector power dissipation

100

mW

Junction temperature

125

°

C

Storage temperature

–55 to +125

°

C



Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

15

V

Collector-emitter voltage (Base open)

12

V

Emitter-base voltage (Collector open)

5

V

Collector-base cutoff current (Emitter open)

0.1

µ

A

Forward current transfer ratio

270

680



Collector-emitter saturation voltage

250

mV

Transition frequency

200

MHz

Collector output capacitance

(Common base, input open circuited)

4.5

pF

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Unit: mm

1: Base

2: Emitter

3: Collecter

SSSMini3-F1 Package

0.33

(0.40)

(0.40)

1

2

3

5°

+

0.05

−

0.02

−

0.02

−

0.02

Marking Symbol : 4U