PIMD3 datasheet(4/11 Pages) PHILIPS

4 / 11 page

9397 750 14517

Product data sheet

Rev. 09 — 18 May 2005

4 of 11

Philips Semiconductors

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 k

Ω, R2 = 10 kΩ

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB with 65

µm copper strip line, standard footprint.

[3]

Reﬂow soldering is the only recommended soldering method.

Characteristics

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT363

[1] -

625

K/W

SOT457

[2] -

417

K/W

SOT666

[1] [3] -

625

K/W

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT363

[1] -

416

K/W

SOT457

[2] -

208

K/W

SOT666

[1] [3] -

416

K/W

Table 8:

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE =30V; IB =0A

µA

VCE =30V; IB =0A;

Tj = 150 °C

--50

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

400

µA

hFE

DC current gain

VCE =5V; IC = 5 mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

VI(off)

off-state input voltage VCE =5V; IC = 100 µA

1.1

0.8

VI(on)

on-state input voltage VCE = 0.3 V; IC = 10 mA

2.5

1.8

bias resistor 1 (input)

Ω

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

---

TR1 (NPN)

2.5

TR2 (PNP)

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