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THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA
Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com
600041 Rev B
Page 3
1. All specifications subject to change without notice.
2. Unless otherwise noted, T
A=25°C.
SPECIFICATIONS1 (Cont’d)
NPN Electrical Characteristics2
Parameter
Symbol
Conditions
Min
Typ
Max
Units
NPN Current Gain
hfe
VCB =10V
IC =1mA
60
100
—
IC =10
mA
100
—
NPN Current Gain Matching
Dhfe
VCB =10V,IC =1mA
—
5
—
%
NPN Noise Voltage Density
eN
VCB =10V,IC = 1 mA, 1 kHz
—
0.8
—
nV Hz
NPN Gain-Bandwidth Product
fT
IC = 1 mA, VCB = 10 V
350
MHz
NPN
DVBE (THAT300: VBE1-VBE2 ;VBE3-VBE4) (THAT340: VBE1-VBE2)
VOS
IC =1mA
—
±0.5
±3mV
IC =10
mA—
±0.5
mV
NPN
DIB (THAT300: IB1-IB2, IB3-IB4) (THAT340: IB1-VB2)
IOS
IC =1mA
—
±500
±1500
nA
IC =10
mA—
±5nA
NPN Collector-Base Leakage Current ICBO
VCB =25V
—
25
—
pA
NPN Bulk Resistance
rBE
VCB =0V,10
mA< IC < 10 mA
—
2
—
W
NPN Base Spreading Resistance
rbb
VCB =10V,IC =1mA
—
30
—
W
NPN Collector Saturation Voltage
VCE(SAT)
IC = 1 mA, IB = 100
mA
—
0.05
V
NPN Output Capacitance
COB
VCB =10V,IE = 0 mA, 100 kHz
3
pF
NPN Collector-CollectorCapacitance (THAT300: Q1-Q2, Q3-Q4) (THAT340: Q1-Q2)
CCC
VCC = 0 V, 100 kHz
0.7
pF
13
12
Q2
11
10
9
8
Q4
SUB
1
2
3
4
5
6
7
Q1
Q3
SUB
14
THAT 340
Fig 3. 340 Pinout
GKH YK
THAT
312
17C1
18B
Q1
E
Q1
B
Q1
C
Q3
C
Q3
B
Q3
E
Q5
E
Q5
B
Q5
C
Q7
E
Q7
B
Q7
C
Q2
C
Q2
B
Q2
E
Q8
C
Q8
B
Q8
E
Q4
B
Q4
E
Q6
E
Q6
B
Q4
C
Q6
C
Q1
PNP
Q2
PNP
Q3
NPN
Q4
NPN
Q7
PNP
Q8
PNP
Q5
NPN
Q6
NPN
Fig 4. 380 Die layout