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IXTP52P10P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTP52P10P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor IXTP52P10P · FEATURES · Static drain-source on-resistance: RDS(on)≤50mΩ · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATION · Hight side switching · Current regulators · Automatic test equipment · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous -52 A IDM Drain Current-Single Pulsed -130 A PD Total Dissipation @TC=25℃ 300 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.42 ℃ /W |
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