S

D

G

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

3.3

Case-to-Ambient (PCB mount)**

–––

50

°C/W

Junction-to-Ambient

–––

110

Thermal Resistance

Description

12/6/04

www.irf.com

1

utilize advanced processing techniques to achieve the lowest possible on-

resistance per silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient device for use in

a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter

Max.

Units

17

12

A

Pulsed Drain Current



72

Power Dissipation

45

W

Linear Derating Factor

0.3

W/°C

Gate-to-Source Voltage

± 16

V

Single Pulse Avalanche Energy

‚

68

mJ

Avalanche Current



11

A

Repetitive Avalanche Energy



4.5

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

PD- 95081A

IRLR024NPbF

IRLU024NPbF

D-Pak

I-Pak

IRLR024NPbF IRLU024NPbF