IRLL024ZTRPBF datasheet(2/6 Pages) VBSEMI

2 / 6 page

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

µA

VDS = 60 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 6.0 A

0.028

VGS = 10 V, ID = 6.0 A, TJ = 125 °C

0.032

VGS = 10 V, ID = 6.0 A, TJ = 175 °C

0.040

VGS = 4.5 V, ID = 5.1 A

0.033

Forward Transconductancea

gfs

VDS = 15 V, ID = 6.0 A

Diode Forward Voltagea

VSD

IS = 1.7 A, VGS = 0 V

0.8

1.2

Dynamicb

Total Gate Charge

VDS = 30 V, VGS = 10 V, ID = 6.0 A

Gate-Source Charge

Qgs

3.4

Gate-Drain Charge

Qgd

5.3

Gate Resistance

VGS = 0.1 V, f = 5 MHz

0.5

1.4

2.4

Turn-On Delay Time

td(on)

VDD = 30 V, RL = 30 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 1.7 A, dI/dt = 100 A/µs

Output Characteristics

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 V thru 5 V

4 V

3 V

VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

1234

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

TC = 150 °C

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IRLL024ZTRPBF

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