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2N5671 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # 2N5671
Description  NPN HIGH POWER SILICON TRANSISTOR
PDF  2 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N5671 Datasheet(HTML) 2 Page - Microsemi Corporation

  2N5671 Datasheet HTML 1Page - Microsemi Corporation 2N5671 Datasheet HTML 2Page - Microsemi Corporation  
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2N5671, 2N5672 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con’t)
Collector-Base Cutoff Current
VCB = 120 Vdc
2N5671
VCB = 150 Vdc
2N5672
ICBO
25
25
mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
10
mAdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 15 Adc, VCE = 2.0 Vdc
IC = 20 Adc, VCE = 5.0 Vdc
hFE
20
20
100
Collector-Emitter Saturation Voltage
IC = 15 Adc, IB = 1.2 Adc
IC = 30 Adc, IB = 6.0Adc
VCE(sat)
0.75
5.0
Vdc
Base-Emitter Saturation Voltage
IC = 15 Adc, IB = 1.2 Adc
VBE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz
h
fe
10
40
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
900
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 ± 2.0 Vdc; IC = 15 Adc; IB1 = 1.2 Adc
ton
0.5
µs
Turn-Off Time
VCC = 30 ± 2.0 Vdc; IC = 15 Adc; IB1 = IB2 = 1.2 Adc
toff
1.5
µs
SAFE OPERATING AREA
DC Tests
TC = +25
0C, 1 Cycle, t = 1.0 s
Test
VCE = 24 Vdc, IC = 5.8 Adc
Test 2
VCE = 45 Vdc, IC = 0.9 Adc
Test 3
VCE = 4.67 Vdc, IC = 30 Adc
Test 4
VCE = 90 Vdc, IC = 0.19 Adc
2N5671
Test 5
VCE = 120 Vdc, IC = 0.11 Adc
2N5672
(3) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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