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MPX2200DP Datasheet(PDF) 2 Page - NXP Semiconductors

Part # MPX2200DP
Description   200 kPa On-Chip Temperature Compensated Silicon Pressure Sensors
PDF  8 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MPX2200DP Datasheet(HTML) 2 Page - NXP Semiconductors

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MPX2200
Sensors
2
Freescale Semiconductor
Pressure
Operating Characteristics
Table 1. Operating Characteristics (VS = 10 VDC, TA = 25°C unless otherwise noted, P1 > P2)
Characteristic
Symbol
Min
Typ
Max
Units
Differential Pressure Range(1)
1. 1.0 kPa (kiloPascal) equals 0.145 psi.
POP
0
—
200
kPa
Supply Voltage(2)
2. Device is ratiometric within this specified excitation range. Operating the device above the specified excitation range may induce additional
error due to device self-heating.
VS
—
10
16
VDC
Supply Current
IO
—
6.0
—
mAdc
Full Scale Span(3)
3. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the
minimum rated pressure.
VFSS
38.5
40
41.5
mV
Offset(4)
4. Offset (VOFF) is defined as the output voltage at the minimum rated pressure.
VOFF
-1.0
—
1.0
mV
Sensitivity
ΔV/ΔΡ
—
0.2
—
mV/kPa
Linearity
MPX2200D Series
MPX2200A Series
—
-0.25
-1.0
—
—
0.25
1.0
%VFSS
Pressure Hysteresis(0 to 200 kPa)
—
—
±0.1
—
%VFSS
Temperature Hysteresis(- 40°C to +125°C)
—
—
±0.5
—
%VFSS
Temperature Coefficient of Full Scale Span
TCVFSS
-1.0
—
1.0
%VFSS
Temperature Coefficient of Offset
TCVOFF
-1.0
—
1.0
mV
Input Impedance
ZIN
1300
—
2500
Ω
Output Impedance
ZOUT
1400
—
3000
Ω
Response Time(5) (10% to 90%)
5. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to
a specified step change in pressure.
tR
—
1.0
—
ms
Warm-Up Time(6)
6. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the pressure is stabilized.
—
—
20
—
ms
Offset Stability(7)
7. Offset stability is the product’s output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.
—
—
±0.5
—
%VFSS



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