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PBLS6002D Datasheet(PDF) 8 Page - NXP Semiconductors |
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PBLS6002D Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 16 page ![]() 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 8 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch VCE = −5V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values Fig 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values VCE = −5V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C IC/IB =20 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 7. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values 006aaa474 200 400 600 hFE 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) 006aaa475 IC (mA) −10−1 −104 −103 −1 −102 −10 −10−1 −1 VCEsat (mV) −10−2 (1) (2) (3) 006aaa476 −0.6 −0.4 −0.8 −1.0 VBE (V) −0.2 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) 006aaa477 −0.5 −0.7 −0.3 −0.9 −1.1 VBEsat (V) −0.1 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) |
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