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DO2302F Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # DO2302F
Description  N-Channel MOSFET uses advanced trench technology
PDF  3 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

DO2302F Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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DO2302F
Electrical Characteristics：(T
A25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
20
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=16V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±10V, VDS=0A
---
---
±10
uA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
0.3
0.65
1
V
RDS(ON)
Drain-Source On Resistance
VGS=4.5V,ID=1.8A
---
90
110
mΩ
VGS=2.5V,ID=0.8A
---
115
150
VGS=1.8D=0.3
---
165
215
Dynamic Characteristics
Ciss
Input Capacitance
VDS=16 VGS=0V, f=1MHz
---
79
120
pF
Coss
Output Capacitance
---
13
20
Crss
Reverse Transfer Capacitance
---
9
1
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=10V ,VGEN=4.5V,
RG=10Ω,ID=500mA
---
6.7
---
ns
tr
Rise Time
---
4.8
---
ns
td(off)
Turn-Off Delay Time
---
17.3
---
ns
tf
Fall Time
---
7.4
---
ns
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=0.5A
---
0.7
1.3
V



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