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DS20005696A-page 1

LND01

Features

• Bi-directional

• Low On-resistance

• Low Input Capacitance

• Fast Switching Speeds

• High Input Impedance and High Gain

• Low Power Drive Requirement

• Ease of Paralleling

Applications

• Normally-on Switches

• Solid-state Relays

•Converters

• Constant Current Sources

• Analog Switches

General Description

The LND01 is a low-threshold, Depletion-mode

(normally-on) transistor that uses an advanced lateral

DMOS structure and a well-proven silicon gate

manufacturing process. This combination produces a

device with the power handling capabilities of bipolar

transistors as well as the high input impedance and

positive

temperature

coefficient

inherent

in

MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally

induced secondary breakdown.

The body of the transistor is connected to the gate pin.

The channel is therefore being pinched off by both the

gate and body. The gate pin has a diode connected to

the drain terminal and another diode connected to the

source terminal.

Package Type

5-lead SOT-23

See Table 2-1 for pin information.

DRAIN

SOURCE

GATE

N/C

N/C

Lateral N-Channel Depletion-Mode MOSFET