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SC007NG Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # SC007NG
Description  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SC007NG Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
SC007NG
Part NO.
Marking
Package
SC007NG
C007N
SOP-8
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=30V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
1.5
2.5
V
RDS(ON)
Drain-Source On Resistance
3
VGS=10V,ID=10A
---
4.8
6
mΩ
VGS=4.5V,ID=5A
---
7.5
12
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
1614
---
pF
Coss
Output Capacitance
---
245
---
Crss
Reverse Transfer Capacitance
---
215
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=15V, ID=30A,
VGS=10V,RGEN=3Ω
---
7.5
---
ns
tr
Rise Time
---
14.5
---
ns
td(off)
Turn-Off Delay Time
---
35.2
---
ns
tf
Fall Time
---
9.6
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=15V,
ID=30A
---
33.7
---
nC
Qgs
Gate-Source
Charge
---
8.5
---
nC
Qgd
Gate-Drain “Miller” Charge
---
7.5
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=30A
---
---
1.2
V
Is
Continuous Source Current
---
---
---
70
A
lsm
Pulsed Source Current
---
---
280
A



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