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SC010NG Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # SC010NG
Description  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SC010NG Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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2 —
SC010NG
Package Marking and Ordering Information：
Part NO.
Marking
Package
SC010NG
C010N
SOP-8
Electrical Characteristics：(T
A=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
IDSS
Drain-Source Leakage Current
VDS=150V , VGS=0V
---
---
1
uA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0V
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.2
1.5
2.5
V
RDS(ON)
Static Drain-Source On Resistance
2
VGS=10V,ID=8A
---
9
10
mΩ
VGS=4.5V,ID=6A
12
18
GFS
Forward Transconductance
VDS=5V, ID=8A
---
24
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
940
1316
pF
Coss
Output Capacitance
---
131
183
Crss
Reverse Transfer Capacitance
---
109
153
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=15V, ,
RGEN=1.5Ω, VGS=10V
ID=8A
---
4.2
8.4
ns
tr
Rise Time
---
8.2
15
ns
td(off)
Turn-Off Delay Time
---
31
62
ns
tf
Fall Time
---
4
8
ns
Qg
Total Gate Charge
VGS=4.5V, VDS=15V,
ID=8A
---
9.63
13.5
nC
Qgs
Gate-Source
Charge
---
3.88
5.4
nC
Qgd
Gate-Drain “Miller” Charge
---
3.44
4.8
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=1A,TJ=25℃
---
---
1
V
---



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