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SSM3J36FS Datasheet(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Part # SSM3J36FS
Description  P-Channel 20 V (D-S) MOSFET
PDF  8 Pages
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Manufacturer  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SSM3J36FS Datasheet(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
2
4
6
8
0
0.45
0.9
1.35
1.8
Q
g -Total Gate Charge (nC)
V
DS = 16 V
V
DS = 10 V
I
D = 0.4 A
V
DS = 5 V
0.1
1
10
0.0
0.3
0.6
0.9
1.2
1.5
V
SD - Source-to-Drain Voltage (V)
T
J = 25 °C
T
J = 150 °C
0.3
0.4
0.5
0.6
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J -Temperature (°C)
ID = 250 μA
0.7
0.9
1.1
1.3
1.5
- 50
- 25
0
25
50
75
100
125
150
T
J - Junction Temperature (°C)
I
D = 0.35 A
V
GS = 4.5 V
V
GS = 2.5 V
0.4
0.6
0.8
1.0
1.2
12345678
V
GS - Gate-to-Source Voltage (V)
T
J = 125 °C
I
D = 0.35 A
T
J = 25 °C
0
2
4
6
8
10
0.001
0.01
0.1
1
10
Time (s)
SSM3J36FS
4
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw



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