FTC3227 datasheet(1/1 Pages) FS

Part #	FTC3227

Description	TRANSISTOR (NPN)

PDF	1 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 1 page

SEMICONDUCTOR

TECHNICAL D ATA

FTC3227

TO – 92L

1. EMITTER

2. COLLECTOR

3. BASE

FTC3227

TRANSISTOR (NPN)

FEATURES

Complementary to FTA1274

MAXIMUM RATINGS (Ta=25

unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 1mA,IE=0

80

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=5mA,IB=0

80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=50V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

hFE(1)

VCE=2V, IC=50mA

70

240

DC current gain

hFE(2)

VCE=2V, IC=200mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=200mA,IB=20mA

0.4

V

Base-emitter voltage

VBE

VCE=2V,IC=5mA

0.55

0.8

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

10

pF

Transition frequency

fT

VCE=10V,IC=10mA

100

MHz

CLASSIFICATION OF hFE(1)

Y

O

K

N

A

R

RANGE

0

4

2

-

0

2

1

0

4

1

-

0

7

t

i

n

U

e

u

l

a

V

r

e

t

e

m

a

r

a

P

l

o

b

m

y

S

VCBO

V

0

8

e

g

a

tl

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

VCEO

V

0

8

e

g

a

tl

o

V

r

e

t

ti

m

E

-

r

o

t

c

e

ll

o

C

VEBO

V

5

e

g

a

tl

o

V

e

s

a

B

-

r

e

t

ti

m

E

IC

A

4

.

0

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

PC

W

5

7

.

0

n

o

it

a

p

i

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

RθJA

Thermal Resistance From Junction To Ambient

167

℃/W

Tj

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

it

c

n

u

J

℃

Tstg

0

5

1

+

~

5

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

℃

2011. 09. 27

1/1

Revision No : 0

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