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FTC4373 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTC4373 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 1 page ![]() 2011. 08. 11 1/1 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA FTC4373 NPN Transistor FEATURES Small Flat Package High Current Application High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) t i n U e u l a V r e t e m a r a P l o b m y S VCBO V 0 2 1 e g a t l o V e s a B - r o t c e ll o C VCEO V 0 2 1 e g a t l o V r e t t i m E - r o t c e ll o C VEBO V 5 e g a t l o V e s a B - r e t t i m E IC A 8 . 0 t n e r r u C r o t c e ll o C PC W m 0 0 5 n o i t a p i s s i D r e w o P r o t c e ll o C RθJA Thermal Resistance From Junction To Ambient 250 ℃/W Tj 0 5 1 e r u t a r e p m e T n o i t c n u J ℃ Tstg 0 5 1 + ~ 5 5 - e r u t a r e p m e T e g a r o t S ℃ ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 5 V Collector cut-off current ICBO VCB=-120V,IE=0 100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 100 nA DC current gain hFE VCE=-5V, IC=-100mA 80 240 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA 1 V Base-emitter voltage VBE VCE=-5V, IC=-500mA 1 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 30 pF Transition frequency fT VCE=-5V,IC=-0.1A, f=30MHz 120 MHz CLASSIFICATION OF hFE RANK Y O RANGE 80–160 120–240 MARKING Y C CO SOT-89 DIM A B D E G H K 4.70 MAX 2.50 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50 0.10 0.40 TYP 1.7 MAX 0.7 MIN 0.5+0.15/-0.10 C J G D A C K F MILLIMETERS H F 1 2 3 F D + _ + _ 1. BASE 2. COLLECTOR 3. EMITTER |
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