MJD112 datasheet(1/4 Pages) FS

Part #	MJD112

Description	TRANSISTOR (NPN)

PDF	4 Pages

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Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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MJD112

TRANSISTOR (NPN)

FEATURES

ComplementaryDarlington Power Transistors

Dpak forSurface Mount Applications

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=1mA,IE=0

100

V

Collector-emitter breakdown voltage

V(BR)CEO

IC =30mA,IB=0

100

V

Emitter-base breakdown voltage

V(BR)EBO

IE=5mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=100V,IE=0

20

µA

Collector-emitter cut-off current

ICEO

VCE=50V,IE=0

20

µA

Emitter cut-off current

IEBO

VEB=5V,IC

A

m

2

0

=

hFE(1)

VCE=3V,IC=500mA

500

hFE(2)

VCE=3V,IC=2A

1000

12000

DC current gain

hFE(3)

VCE=3V,IC=4A

200

VCE(sat)1

IC=2A,IB=8mA

2

V

Collector-emitter saturation voltage

VCE(sat)2

IC=4A,IB=40mA

3

V

Base-emitter voltage

VBE

VCE=3V,IC=2A

2.8

V

Transition frequency

fT

VCE=10V,IC=0.75A,f=1MHz

25

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=0.1MHz

100

pF

TO-252-2L

1. BASE

2. COLLECTOR

3. EMITTER

SEMICONDUCTOR

TECHNICAL DATA

MJD112

2018. 02. 08

1/4

Revision No : 0

MAXIMUM RATINGS (Ta=25

unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

2

A

PC

Collector Power Dissipation

1

W

R JC

Thermal resistance, junction to case

6.25

℃/W

R JA

Thermal resistance, junction to Ambient

71.4

℃/W

TJ

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

℃

Tstg

0

5

1

-

5

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

℃

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