HM6409AE datasheet(2/3 Pages) HMSEMI

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ELECTRICAL CHARACTERISTICS

一般电气特性

Parameter 参数

符号

Test Condition 测试条件

最小值

典型值

最大值

单位

Static 静态参数

Drain-Source Breakdown Voltage 漏源击穿电压

BVDSS

VGS = 0V, ID = -250uA

-20

Drain-Source On-State Resistance 漏源导通电阻

RDS(on)

VGS = -1.8V, ID = -2.0A

73.0

Drain-Source On-State Resistance 漏源导通电阻

RDS(on)

VGS = -2.5V, ID = -4.0A

54.0

Drain-Source On-State Resistance 漏源导通电阻

RDS(on)

VGS = -4.5V, ID =-5.5A

43.0

mΩ

Gate Threshold Voltage 开启电压

VGS(th)

VDS =VGS, ID = -250uA

-0.3

-1.0

Zero Gate Voltage Drain Current 零栅压漏极电流

IDSS

VDS = -16V, VGS = 0V

-1

Gate Body Leakage 漏极短路时截止栅电流

IGSS

VGS = ± 8V, VDS = 0V

Gate Resistance G 极电阻

VDS = 0V, f = 1.0MHz

6.5

Ω

Dynamic 动态参数

Total Gate Charge 栅极总电荷

10.2

Gate-Source Charge 栅-源极电荷

Qgs

0.84

Gate-Drain Charge 栅-漏极电荷

Qgd

VDS = -10 V, ID = -5.5 A

VGS = -4.5V

2.53

Turn-On Delay Time 导通延迟时间

td(on)

300

Turn-On Rise Time

导通上升时间

780

Turn-Off Delay Time 关断延迟时间

td(off)

5073

Turn-Off Fall Time

关断下降时间

VDD = -10 V, RL =10Ω

ID = -1 A,VGEN =- 4.5V

RG = 3 Ω

2157

Input Capacitance 输入电容

Ciss

925

Output Capacitance

输出电容

Coss

115

Reverse Transfer Capacitance 反向传输电容

Crss

VDS = -10 V, VGS = 0V

f = 1.0 MHz

77.5

Source-Drain Diode 源漏二极管参数

Max. Diode Forward Current 最大正向电流

-2.2

Diode Forward Voltage

正向电压

VSD

IS = 1.0, VGS = 0V

-1.0

Note: Pulse test: pulse width <= 300us, duty cycle<= 2% 注意：脉冲测试：脉冲宽度<= 300us 死区<= 2%

Data Sheet

85.0

55.0

65.0

HM 6409AE

HM6409AE Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM6409AE Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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