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TS13002ACTB0 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TS13002ACTB0 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  TS13002A 1-2 2004/08 rev. C TS13002A High Voltage NPN Transistor Pin assignment: 1. Emitter 2. Collector 3. Base BVCEO = 400V BVCBO = 700V Ic = 0.3A VCE (SAT), = 1.5V @ Ic / Ib = 200mA / 20mA Features High voltage. High speed switching Structure Silicon triple diffused type. NPN silicon transistor Ordering Information Part No. Packing Package TS13002ACT B0 Bulk TO-92 TS13002ACT A3 AMMO pack TO-92 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V DC 0.3 Collector Current Pulse IC 0.5 A Collector Power Dissipation PD 0.6 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10mA, IB = 0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IE = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Collector Cutoff Current VCB = 700V, IE = 0 ICBO -- -- 10 uA Emitter Cutoff Current VEB = 7V, IC = 0 IEBO -- -- 10 uA Collector-Emitter Saturation Voltage IC / IB = 200mA / 20mA IC / IB = 100mA / 10mA VCE(SAT)1 VCE(SAT)2 -- -- -- -- 1.5 1.0 V VCE = 10V, IC = 10uA hFE1 15 -- 40 VCE = 10V, IC = 100mA hFE2 25 -- 40 DC Current Gain VCE = 10V, IC = 280mA hFE3 12 -- 30 Frequency VCE = 10V, IC = 0.1A fT 4 -- -- MHz Output Capacitance VCB = 10V, f = 0.1MHz Cob -- 21 -- pF Turn On Time tON -- 1.1 -- µS Storage Time tSTG -- -- 4 µS Fall Time VCC = 125V, IC = 100mA, IB1 = IB2 = 20mA, RL = 125ohm tf -- -- 0.7 µS Note : pulse test: pulse width <=5mS, duty cycle <=10% |
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