MJD32C datasheet(2/6 Pages) ONSEMI

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MJD31C MJD32C

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

100

—

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

ICEO

—

µAdc

Collector Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ICES

—

µAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

—

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

hFE

—

Collector–Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

VCE(sat)

—

1.2

Vdc

Base–Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

VBE(on)

—

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product (2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

—

MHz

Small–Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

—

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%.

(2) fT = hfe• ftest.

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