| Electronic Components Datasheet Search |
|
LND150 Datasheet(PDF) 1 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
LND150 Datasheet(HTML) 1 Page - Microchip Technology |
|
1 / 16 page ![]() 2018 Microchip Technology Inc. DS20005454A-page 1 LND150/LND250 Features • Free from Secondary Breakdown • Low-Power Drive Requirement • Ease of Paralleling • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and Low CISS • ESD Gate Protection Applications • Solid-State Relays • Normally-On Switches •Converters • Power Supply Circuits • Constant-Current Sources • Input Protection Circuits General Description The LND150 and LND250 are high-voltage N-channel Depletion-mode (normally-on) transistors utilizing lateral DMOS technology. The gate is ESD protected. The LND150/LND250 are ideal for high-voltage appli- cations, such as normally-on switches, precision constant-current sources, voltage-ramp generation and amplification. Package Types See Table 3-1, Table 3-2 and Table 3-3 for pin information. 3-lead SOT-23 (Top view) 3-lead TO-92 (Top view) 3-lead SOT-89 (Top view) GATE SOURCE DRAIN GATE SOURCE DRAIN SOURCE DRAIN SOURCE GATE N-Channel Depletion-Mode DMOS FETs |
Similar Part No. - LND150 |
|
Similar Description - LND150 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |