HMS80P05 datasheet(2/5 Pages) HMSEMI

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Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

RθJC

0.83

℃

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-50

Zero Gate Voltage Drain Current

IDSS

VDS=-50V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.7

-1.1

-1.8

VGS=-10V, ID=-20A

7.6

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-20A

9.4

11.8

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=-20A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

4414

Output Capacitance

Coss

1352

Reverse Transfer Capacitance

Crss

VDS=-25V,VGS=0V,

F=1.0MHz

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

12.5

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-25V,ID=-20A

VGS=-10V,RG=1.6Ω

Total Gate Charge

65.5

Gate-Source Charge

Qgs

12.7

Gate-Drain Charge

Qgd

VDS=-25V,ID=-20A,

VGS=-10V

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-20A

-1.2

Diode Forward Current

(Note 2)

-80

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF =-20A

di/dt = 100A/μs

(Note3)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25 ,V

℃ DD=-25V,VG=-10V,L=0.5mH,Rg=25Ω

HMS80P05 Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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