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PJM02N60SA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM02N60SA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 7 page  Features Schematic diagram SOT-23 Applications High power and current handing capability RDS(ON) < 85mΩ @VGS = 10V RDS(ON) < 120mΩ @VGS = 4.5V VDS=60V, ID=2A DC/DC Converter Battery Switch 1.Gate 2.Source 3.Drain PJM02 60SA N- Enhancement Mode Field Effect Transistor 1 / 7 Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 V Continuous Drain Current ID 2 A Pulsed Drain Current Note1 IDM 10 A Operating Junction Temperature TJ 150 ℃ Storage Temperature TSTG - 55 to + 150 ℃ Thermal Characteristics www.pingjingsemi.com Revision：2.0 May-2020 Total Power Dissipation PD 0.9 W Parameter Symbol Value Unit Thermal Resistance, Junction to Ambient Note2 RθJA 139 ℃ / W |
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