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PJM2310NSA Datasheet(PDF) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM2310NSA Datasheet(HTML) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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3 / 6 page ![]() 0 3 6 9 12 15 0 1 2 3 4 5 V GS =10V T a =25 ℃ Pulsed V GS =2.5V V GS =3V V GS =4.5V Output Characteristics DRAIN TO SOURCE VOLTAGE V GS (V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.4 0.8 1.2 1.6 2.0 V DS=3V Pulsed T a=25℃ GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T a=125℃ 0 2 4 6 8 10 20 40 60 80 100 120 140 V GS =4.5V V GS =10V T a =25 ℃ Pulsed R DS(ON) I D DRAIN CURRENT I D (A) 0 2 4 6 8 10 0 50 100 150 200 250 Pulsed I D=3A T a=25℃ R DS(ON) - V GS GATE TO SOURCE VOLTAGE V GS (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 T a=125℃ Pulsed T a=25℃ I S - V SD SOURCE TO DRAIN VOLTAGE V SD (V) 25 50 75 100 125 0.4 0.6 0.8 1.0 1.2 1.4 I D =250uA Threshold Voltage JUNCTION TEMPERATURE T j ( ℃) Typical Characteristics Curves PJM2310NSA N- Enhancement Mode Field Effect Transistor 3 / 6 www.pingjingsemi.com Revision:1.1 Jan-2019 |
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