PJM2303PSA datasheet(2/7 Pages) PJSEMI

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Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static Characteristics

Drain-source breakdown voltage

-V(BR)DSS

VGS = 0V, ID =-250µA

Zero gate voltage drain current

-IDSS

VDS =-

30V,VGS = 0V

µA

Gate-source leakage current

IGSS

VGS =±20V, VDS = 0V

±100

Drain-source on-resistance Note2

RDS(on)

VGS =-10V, ID =-

130

mΩ

VGS =-4.5V, ID =-

1.5A

115

180

mΩ

Gate threshold voltage Note2

-VGS(th)

VDS =VGS, ID =-250µA

2.5

Dynamic Characteristics

Input capacitance

Ciss

VDS =-15V,VGS =0V,f =1MHz

226

Output capacitance

Coss

Reverse transfer capacitance

Crss

Switching Characteristics

Turn-on delay time

td(on)

VGS=-10V,VDS=-15V,

RL=

15Ω,RGEN=6Ω

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Notes:

Surface mounted on FR4 board，t ≤ 10 sec.

Pulse test: Pulse width ≤300µs, duty cycle ≤2%.

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Electrical Characteristics (TA=25℃ unless otherwise specified)

Source-Drain Diode Characteristics

Diode forward voltage

VSD

IS=-

2A,VGS=0V

-1

Forward tranconductance Note2

gFS

VDS =-

10V, ID =-2A

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Revision：1.0 Jun-2019

Total Gate Charge

VGS=-10V,VDS=-15V,

ID=-2A

8.5

Gate Source Charge

2.3

Gate Drain Charge

Qgd

1.5

Qgs

PJM2303PSA

P Enhancement Field Effect Transistor

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