PJM3401PSA datasheet(2/6 Pages) PJSEMI

2 / 6 page

2 / 6

Electrical Characteristics (TA=25℃ unless otherwise specified)

PJM3401PSA

P-Enhancement Field Effect Transistor

Parameter

Symbol

Test Condition

Min.

Typ.

Max. Units

Static Characteristics

Drain-source breakdown voltage

-V(BR)DSS

VGS = 0V, ID=-250µA

Drain to Source Leakage Current

-IDSS

VDS =-24V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±12V, VDS = 0V

±100

Gate threshold voltage Note2

-VGS(th)

VDS =VGS, ID =-250µA

0.7

1.3

Drain-source on-resistance Note2

RDS(on)

VGS =-10V, ID =-4.1A

mΩ

VGS =-4.5V, ID =-2A

mΩ

Forward transconductance Note2

gFS

VDS =-5V, ID =-5A

Dynamic characteristics

Input Capacitance

Ciss

VDS = -15V,VGS = 0V,f=1MHz

954

Output Capacitance

Coss

115

Reverse Transfer Capacitance

Crss

Switching Characteristics

Turn-on delay time

td(on)

VDD=-15V,

VGS=-10V，RGEN =6Ω,

RL =3.6Ω,

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

6.3

3.2

38.2

Source-Drain Diode characteristics

Diode Forward voltage

-VDS

VGS =0V, IS=-

Note

s: 1. Surface mounted on FR4 board，t ≤ 10 sec.

2. Pulse test ; pulse width ≤300μs, duty cycle ≤2%.

www.pingjingsemi.com

Revision：2.1 Jun-2019

PJM3401PSA Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3401PSA Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL