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PJM3413PSA Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # PJM3413PSA
Description  P-Channel Power MOSFET
PDF  4 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3413PSA Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM3413PSA
P-Channel Power MOSFET
www.pingjingsemi.com
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Revision:1.0 Dec-2018
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Static Parameters
Drain-Source Breakdown Voltage
-BVDSS
-ID=250µA, VGS=0V
20
--
--
V
Zero Gate Voltage Drain Current
-IDSS
-VDS=20V, VGS=0V
--
--
1
µA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±12V
--
--
±100
nA
Gate Threshold Voltage Note2
-VGS(th)
VGS=VDS, -ID= 250µA
0.3
--
1
V
Static Drain-Source On-Resistance
Note2
RDS(ON)
-VGS=4.5V, -ID=3A
--
81
95
mΩ
-VGS=2.5V, -ID=2A
--
108
130
mΩ
-VGS=1.8V, -ID=1A
--
146
190
mΩ
Forward Transconductance Note2
gFS
-VDS=4.5V, -ID=3A
--
8
--
S
Dynamic Parameters
Input Capacitance
Ciss
VGS=0V, -VDS=10V, f=1MHz
--
560
745
pF
Output Capacitance
Coss
--
80
--
pF
Reverse Transfer Capacitance
Crss
--
70
--
pF
Switching Parameters
Total Gate Charge
Qg
-VGS=4.5V, -VDS=10V,
-ID=3A
--
8.5
11
nC
Gate Source Charge
Qgs
--
1.2
--
nC
Gate Drain Charge
Qgd
--
2.1
--
nC
Turn-On DelayTime
tD(on)
-VGS=4.5V, -VDS=10V,
RL=3.3Ω, RGEN=6Ω
--
7.2
--
ns
Turn-On Rise Time
tr
--
36
--
ns
Turn-Off DelayTime
tD(off)
--
53
--
ns
Turn-Off Fall Time
tf
--
56
--
ns
Source-Drain Diode Parameters
Body Diode Forward Voltage
-VSD
-IS=1A, VGS=0V
--
--
1
V
Body Diode Continuous Source
Current
-IS
--
--
1.4
A
Notes: 1. Repetitive rating: pulsed width limited by maximum junction temperature.
2. Pulse width ≤ 300μs, duty cycle ≤ 2%.
Electrical Characteristics
TC =25
℃ unless otherwise specified.



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