| Electronic Components Datasheet Search |
|
MMBD7000 Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
|
|
|||||||||||||||||||||||||||||
MMBD7000 Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
|
1 / 3 page ![]() MMBD7000 Silicon Epitaxial Planar Switching Diode 1 / 3 Fe atures Dual Switching Diode Fast Switching Speed Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage VRRM 100 V Reverse Voltage VR 75 V Average Rectified Forward Current IF(AV) 200 mA Non-repetitive Peak Forward Surge Current at t = 8.3 ms Total Device Dissipation Ptot 350 mW Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG - 55 to + 150 ℃ Characteristics (Ta=25℃ ) Parameter Symbol Min. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 100 mA VF 0.55 0.7 V Reverse Breakdown Voltage at IR = 100 µA V(BR)R 100 - V Reverse Current at VR = 50 V at VR = 100 V IR - - 1 3 µA Reverse Recovery Time at IF = IR =10 mA, IRR = 1 mA, RL = 100 Ω trr - 4 ns Total Capacitance at VR = 0 V, f = 1 MHz CT - 2 pF 3 1 2 SOT-23 Equivalent Schematic Diagram Marking:B7 www.pingjingsemi.com Revis ion:1.0 Jun-2019 IFSM A 2 0.67 0.82 0.75 1.1 |
Similar Part No. - MMBD7000 |
|
Similar Description - MMBD7000 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |