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FDP3632 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FDP3632 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor FDP3632 · FEATURES · With TO-220 packaging · Drain Source Voltage- : VDSS ≥100V · Static drain-source on-resistance: RDS(on) ≤ 9mΩ@VGS=10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Power supply · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous;@Tc=25℃ 80 A PD Total Dissipation 310 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.48 ℃ /W |
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