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AS7C251MNTF18A Datasheet(PDF) 15 Page - Alliance Semiconductor Corporation

Part # AS7C251MNTF18A
Description  2.5V 1M x 18 Flowthrough Synchronous SRAM with NTD
PDF  18 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C251MNTF18A Datasheet(HTML) 15 Page - Alliance Semiconductor Corporation

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AS7C251MNTF18A
12/23/04, v 1.1
Alliance Semiconductor
P. 15 of 18
AC test conditions
Notes:
1) For test conditions, see “AC test conditions”, Figures A, B, C
2) This parameter measured with output load condition in Figure C.
3) This parameter is sampled, but not 100% tested.
4) tHZOE is less than tLZOE and tHZC is less than tLZC at any given temperature and voltage.
5) tCH measured high above VIH and tCL measured as low below VIL
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
7) Write refers to R/W and BW[a,b]
.
8) Chip select refers to CE0, CE1, and CE2.
Undefined/don’tcare
Falling input
Rising input
• Output load: For tLZC, tLZOE, tHZOE, and tHZC, see Figure C. For all others, see Figure B.
• Input pulse level: GND to 2.5V. See Figure A.
• Input rise and fall time (measured at 0.25V and 2.25V): 2 ns. See Figure A.
• Input and output timing reference levels: 1.25V.
DOUT
50
Figure B: Output load (A)
30 pF*
Figure A: Input waveform
10%
90%
GND
90%
10%
+2.5V
VL = VDDQ/2
Thevenin equivalent:
353
Ω/1538Ω
5 pF*
319
Ω/1667Ω
DOUT
GND
Figure C: Output load(B)
*including scope
and jig capacitance
+2.5V



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