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5NE60C Datasheet(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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5NE60C Datasheet(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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2 / 13 page  ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 2 of 13 5NE60C 4.2 Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance Junction to Case-sink RthJC 1.67 ℃/W Thermal Resistance Junction to Ambient RthJA 62.5 ℃/W 4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted) Parameter Symbol Test Condition Value Units Min Typ Max Off Characteristics Drain-source Breakdown Voltage BVDSS ID=250μA,VGS=0V 600 -- -- V Drain-to-Source Leakage Current IDSS VDS=600V,VGS=0V,TC=25℃ -- -- 1 μA VDS=480V,VGS=0V,TC=125℃ -- -- 100 μA Gate-to-Source Forward Leakage IGSSF VGS=+20V -- -- 10 μA Gate-to-Source Reverse Leakage IGSSR VGS=-20V -- -- -10 μA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 -- 4 V Drain-source on Resistance RDS(on) VGS=10V,ID=2.25A -- 2 2.5 Ω Dynamic Characteristics (Note 4) Forward Transfer Conductance gfs VDS=15V,ID=2.25A -- 3.5 -- S Input Capacitance Ciss VGS=0V,VDS=25V,f=1.0MHz -- 554 -- pF Output Capacitance Coss -- 50 -- Reverse Transfer Capacitance Crss -- 2.2 -- Switching Characteristics (note4) Turn-on Delay Time td(on) ID=4A, VDD=300V, RG=10Ω -- 14 -- nS Turn-on Rise Time tr -- 13 -- nS Turn-off Delay Time td(off) -- 32 -- nS Turn-off Fall Time tf -- 8 -- nS Total Gate Charge Qg ID=4A,VDD=300V,VGS=10V -- 13 -- nC Gate-to-Source Charge Qgs -- 2.7 -- Gate-to-Drain(“Miller”) Charge Qgd -- 5.5 -- Drain-Source Diode Characteristics Diode Forward Voltage (N ote 3) VFSD VGS=0V,IS=4.5A -- -- 1.5 V Diode Forward Current (N ote 2) IS -- -- 4.5 A |
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