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4NE60 Datasheet(PDF) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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4NE60 Datasheet(HTML) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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1 / 13 page  ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 1 of 13 F4NE60 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤2.5Ω) ● Low Gate Charge(Typical Data:13nC) ● Low Reverse Transfer Capacitances(Typical:2.2pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔV DS Test 3 Applications ● Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency. ● Power Switch Circuit of Electron Ballast and Adaptor. 4A 600V N-channel Enhancement Mode Power MOSFET 4 Electrical Characteristics 4.1 Absolute Maximum Rating (Tc=25℃,unless otherwise noted) Parameter Symbol Value Units Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID（T=25℃） （T=100℃） 4 A 3.2 A Drain Current(Pulsed) (Note 1) IDM 16 A Single Pulse Avalanche Energy (Note 5) EAS 200 mJ Peak Diode Recovery dv/dt (Note 6) dv/dt 5 V/ns Total Dissipation Ta=25℃ Ptot 2 W TC=25℃ Ptot 30 W Gate-Source ESD (HBM-C=100pF,R=1.5KΩ） VESD(G-S) 3000 V Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55～150 ℃ Maximum Temperature for Soldering TL 300 ℃ VDSS = 600V RDS(on) （TYP)= 2 Ω ID = 4A TO-220F |
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